triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com 1 product data sheet august 5 , 2008 18 - 20 ghz 5-bit phase shifter TGP1439 key features and performance 0.5um phemt technology 18-20 ghz frequency range 3o typical rms phase shift error -5 db typical insertion loss control voltage: -2.5 v to -5.0 v compact 1.27 mm 2 die area primary applications phased arrays satellite communication systems the triquint TGP1439 is a 5-bit digital phase shifter mmic design using triquint?s proven 0.5 m power phemt process to support a variety of k-band phased array applications including satellite communication systems. the 5-bit design utilizes a compact topology that achieves a 1.27 mm 2 die area, high performance and good tolerance to control voltage variation the TGP1439 provides a 5-bit digital phase shift function with a nominal -5 db insertion loss and 3o rms phase shift error over a bandwidth of 18-20 ghz. the TGP1439 requires a minimum of off-chip components and operates with a -5.0 v to -2.5 v control voltage range. each device is rf tested on- wafer to ensure performance compliance. the device is available in chip form. note: datasheet is subject to change without notice. TGP1439 typical rf performance (fixtured) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 17 18 19 20 21 frequency (ghz) return loss (db) input output -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 17 18 19 20 21 frequency (ghz) insertion loss (db) -10 -5 0 5 10 15 20 25 30 35 40 phase shift error (deg) insertion loss p hase error TGP1439 typical rf performance (fixtured) TGP1439 typical rf performance (fixtured) -12 -9 -6 -3 0 3 6 9 12 0 4 8 1216202428 phase state phase shift error (deg) 18 ghz 19 ghz 20 ghz www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com 2 product data sheet recommended maximum ratings symbol parameter value notes v - control voltage -8 v i + control current 1 ma 3/ p d power dissipation 0.1 w p in input continuous wave power 20 dbm t ch operating channel temperature 150 c 1/, 2 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these ratings apply to each individual fet 2/ junction operating temperature will directly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ total current for the entire mmic electrical characteristics on-wafer rf probe characteristics (t a = 25 c 5 c) symbol parameter test condition vctnl=0v / -2.5v limit min nom max units il insertion loss f = 18, 19, 20 ghz states 0 and 31 -5.5 -4.6 -4.0 db irl input return loss f = 18, 19, 20 ghz states 0 and 31 -16 -11 db orl output return loss f = 18, 19, 20 ghz states 0 and 31 -14 -1 0 db ps phase shift f = 18, 19, 20 ghz state 31 342 344 350 deg 0 200 400 600 800 1000 1200 -5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0 19 ghz reference state insertion loss (db) number of devices TGP1439 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com 3 product data sheet typical fixtured performance over the 18-20 ghz band 0 200 400 600 800 1000 1200 1400 -5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0 19 ghz state 31 phase shift (deg) number of devices 19 ghz state 31 insertion loss (db) number of devices 0 100 200 300 400 500 600 700 800 340 341 342 343 344 345 346 347 348 349 350 parameter unit -5.0 v -2.5 v mean insertion loss db -4.9 -5.0 mean loss flatness db 0.3 0.6 peak amplitude error dbpp 1.2 1.3 rms amplitude error db 0.25 0.30 peak phase shift error deg -3 / +7 -3 / +7 rms phase shift error deg 3.0 2.7 loss temp. variation db/ c -0.0048 -0.0052 ave input return loss db -16 -15 ave output return loss db -15 -15 TGP1439 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com 4 product data sheet mechanical characteristics units: millimeters thickness: 0.1016 chip size tolerance: +/- 0.0508 vcntl = -5.0 v to -2.5 v passive device, rf in and rf out designators for reference only bond pad #1 (rf in) 0.100 x 0.150 bond pad #2 (rf out) 0.100 x 0.150 bond pad #3 (180o bit on: v= vcntl) 0.100 x 0.100 bond pad #4 (180o bit on: v= 0.0v) 0.100 x 0.100 bond pad #5 (90o bit on: v= vcntl) 0.100 x 0.100 bond pad #6 (90o bit on: v= 0.0v) 0.100 x 0.100 bond pad #7 (45o bit on: v= vcntl) 0.100 x 0.100 bond pad #8 (45o bit on: v= 0.0v) 0.100 x 0.100 bond pad #9 (22.5o bit on: v= vcntl) 0.100 x 0.100 bond pad #10 (22.5o bit on: v= 0.0v) 0.100 x 0.100 bond pad #11 (11.25o bit on: v= vcntl) 0.100 x 0.100 0.000 0.000 0.354 0.750 1.693 0.639 0.354 0.769 1.020 1.150 1.490 0.412 0.542 1.102 1.234 12 4 3 5 6 8 10 7 911 TGP1439 note: to turn phase bits off, apply the opposite condition. for example to turn phase bit 180 off, bond pad 3 = 0.0v and bond pad 4 = vcntl. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com 5 product data sheet chip assembly and bonding diagram reflow process assembly notes: ? = ausn (80/20) solder with limited exposure to temperatures at or above 300 c ? = alloy station or conveyor furnace with reducing atmosphere ? = no fluxes should be utilized ? = coefficient of thermal expansion matching is critical for long-term reliability ? = storage in dry nitrogen atmosphere component placement and adhesive attachment assembly notes: ? = vacuum pencils and/or vacuum collets preferred method of pick up ? = avoidance of air bridges during placement ? = force impact critical during auto placement ? = organic attachment can be used in low-power applications ? = curing should be done in a convection oven; proper exhaust is a safety concern ? = microwave or radiant curing should not be used because of differential heating ? = coefficient of thermal expansion matching is critical interconnect process assembly notes: ? = thermosonic ball bonding is the preferred interconnect technique ? = force, time, and ultrasonics are critical parameters ? = aluminum wire should not be used ? = discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire ? = maximum stage temperature: 200 c gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommend 500 ? ?? ? series resistance on the control lines TGP1439 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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